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this is information on a product in full production. july 2014 docid16934 rev 7 1/16 2n5401hr hi-rel pnp bipolar transistor 150 v, 0.5 a datasheet - production data figure 1. internal schematic diagram features ? hermetic packages ? escc and jans qualified ? up to 100 krad(si) low dose rate description the 2n5401hr is a silicon planar pnp transistor specifically designed and housed in hermetic packages for aerospace and hi-rel applications. it is available in the jan qualification system (mil-prf19500 compliance) and in the escc qualification system (escc 5000 compliance). in case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. to-18 lcc-3 3 1 2 3 1 2 ub 3 1 2 4 pin 4 in ub is connected to the metallic lid. bv ceo 150 v i c (max) 0.5 a h fe at 10 v - 150 ma > 60 table 1. device summary device qualification system agency specification package radiation level eppl jansr2n5401ubx jansr mil-prf-19500/766 ub 100 krad high and low dose rate - jans2n5401ubx jans mil-prf-19500/766 ub - - 2n5401rubx escc flight 5202/014 ub 100 krad - low dose rate target 2n5401ubx escc flight 5202/014 ub - target soc5401rhrx escc flight 5202/014 lcc-3 100 krad - low dose rate yes soc5401hrx escc flight 5202/014 lcc-3 - yes 2n5401rhrx escc flight 5202/014 to-18 100 krad - low dose rate - 2n5401hrx escc flight 5202/014 to-18 - - www.st.com
contents 2n5401hr 2/16 docid16934 rev 7 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 radiation hardness assurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.1 lcc-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 ub . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.3 to-18 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 5 order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 shipping details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6.1 date code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6.2 documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
docid16934 rev 7 3/16 2n5401hr electrical ratings 16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) -160 v v ceo collector-emitter voltage (i b = 0) -150 v v ebo emitter-base voltage (i c = 0) -5 v i c collector current for to-18 for lcc-3 and ub -0.6 -0.5 a a p tot total dissipation at t amb 25 c for to-18 for lcc-3 and ub for lcc-3 and ub (1) total dissipation at t c 25 c for to-18 1. when mounted on a 8x10x0.6 mm ceramic substrate. 0.36 0.36 0.58 1.2 w w w w tstg storage temperature -65 to 200 c tj max. operating junction temperature 200 c table 3. thermal data for through-hole package symbol parameter value unit r thjc r thja thermal resistance junction-case __ max thermal resistance junction-ambient __ max 146 486 c/w c/w table 4. thermal data for smd package symbol parameter value unit r thja thermal resistance junction-ambient __ max thermal resistance junction-ambient (1) __ max 1. when mounted on a 8x10x0.6 mm ceramic substrate. 486 302 c/w c/w
electrical characteristics 2n5401hr 4/16 docid16934 rev 7 2 electrical characteristics t case = 25 c unless otherwise specified. table 5. electrical characteristics symbol parameter test conditions min. typ. max. unit i cbo collector-base cut-off current (i e = 0) v cb = -120 v v cb = -120 v t c = 150 c -50 -50 na a i ebo emitter-base cut-off current (i c = 0) v eb = -3 v -50 na v (br)cbo collector-base breakdown voltage (i e = 0) i c = -100 a -160 v v (br)ceo (1) 1. pulsed duration = 300 s, duty cycle 2% collector-emitter breakdown voltage (i b = 0) i c = -1 ma -150 v v (br)ebo emitter-base breakdown voltage (i c = 0) i e = -10 a -5 v v ce(sat) (1) collector-emitter saturation voltage i c = -10 ma i b = -1 ma i c = -50 ma i b = -5 ma -0.2 -0.5 v v v be(sat) (1) base-emitter saturation voltage i c = -10 ma i b = -1 ma i c = -50 ma i b = -5 ma -1 -1 v v h fe (1) dc current gain i c = -1 ma v ce = -5 v i c = -10 ma v ce = -5 v i c = -50 ma v ce = -5 v i c = -10 ma v ce = -5 v t amb = -55 c 50 60 60 20 240 h fe small signal current gain v ce = -10 v i c = -10 ma f = 10 mhz 5 cobo output capacitance (i e = 0) v cb = -10 v f = 1 mhz 6 pf
docid16934 rev 7 5/16 2n5401hr electrical characteristics 16 2.1 electrical characteristics (curves) figure 2. h fe @ v ce = 5 v figure 3. v ce(sat) @ h fe =10 figure 4. v be(sat) @ h fe =10 i c (a) 0.001 0.1 0.01 10 100 1000 t j = -55c t j = -40c t j = 25c t j = 110c t j = 125c am16333v1 i c (a) 0.001 0.1 0.01 0.01 0.1 t j = -55c t j = -40c t j = 25c t j = 110c t j = 125c am16334v1 i c (a) 0.001 0.1 0.01 0.4 t j = -55c t j = -40c t j = 25c t j = 110c t j = 125c 0.5 0.6 0.7 0.8 0.9 1.0 am16335v1
radiation hardness assurance 2n5401hr 6/16 docid16934 rev 7 3 radiation hardness assurance the products guaranteed in radiation within the jans system fully comply with the mil- prf-19500/766 specification. the products guaranteed in radiation within the escc system fully comply with the escc 5201/014 and escc 22900 specifications. jans radiation assurance st jans parts guaranteed at 100 krad (si), tested, in full compliancy with the mil-prf- 19500 specification, specifically the group d, subgroup 2 inspection, between 50 and 300 rad/s. on top of the standard jansr high dose rate by wafer lot guarantee, st 2n5401hr series include an additional wafer by wafer 100 krad low dose rate guarantee at 0.1 rad/s, identical to the escc 100 krad guarantee. it is supported with the same radiation verification test report provided with each shipment. a brief summary of the standard high dose rate by wafer lot jansr guarantee is provided below: ? all test are performed in accordance to mil-prf-19500 and test method 1019 of mil-std-750 for total ionizing dose. the table below provides for each monitored parameters of the test conditions and the acceptance criteria. table 6. mil-prf-19500 (test method 1019) post radiation electrical characteristics symbol parameter test conditions value unit min. max. i cbo collector to base cutoff current v cb = 120 v 100 a i ebo emitter to base cutoff current v eb = 7 v 100 a v (br)ceo breakdown voltage, collector to emitter i c = 1 ma 150 v v (br)bco breakdown voltage, base to collector i c = 100 a 160 v v (br)ebo breakdown voltage, emitter to base i eb = 10 a 5 v h fe forward-current transfer ratio v ce = 5 v; i c = 1 ma [25] (1) 1. see method 1019 of mil-std-750 for how to determine [h fe ] by first calculating the delta (1/h fe ) from the pre- and post-radiation h fe . notice the [h fe ] is not the same as h fe and cannot be measured directly. the [h fe ] value can never exceed the pre-radiation minimum h fe that it is based upon. v ce = 5 v; i c = 10 ma [30] (1) 240 v ce = 5 v; i c = 50 ma [30] (1) v ce(sat) collector-emitter saturation voltage i c = 10 ma; i b = 1 ma 0.2 v i c = 50 ma; i b = 5 ma 0.5 v be(sat) base-emitter saturation voltage i c = 10 ma; i b = 1 ma 1 v i c = 50 ma; i b = 5 ma 1
docid16934 rev 7 7/16 2n5401hr radiation hardness assurance 16 escc radiation assurance each product lot is tested according to the escc basic specification 22900, with a minimum of 11 samples per diffusion lot and 5 samples per wafer, one sample being kept as unirradiated sample, all of them being fully compliant with the applicable escc generic and/or detailed specification. st goes beyond the escc specification by performing the following procedure: ? test of 11 pieces by wafer, 5 biased at least 80% of v (br)ceo , 5 unbiased and 1 kept for reference ? irradiation at 0.1 rad (si)/s ? acceptance criteria of each individual wafer if as 100 krad guaranteed if all 10 samples comply with the post radiation electrical characteristics provided in table 7 ? delivery together with the parts of the radiation verification test (rvt) report of the particular wafer used to manufacture the products. this rvt includes the value of each parameter at 30, 50, 70 and 100 krad (si) and after 24 hour annealing at room temperature and after an additional 168 hour annealing at 100c. table 7. escc 5202/014 post radiation electrical characteristics symbol parameter test conditions value unit min. max. i cbo collector to base cutoff current v cb = 120 v 100 a i ebo emitter to base cutoff current v eb = 7 v 100 a v (br)ceo breakdown voltage, collector to emitter i c = 1 ma 150 v v (br)bco breakdown voltage, base to collector i c = 100 a 160 v v (br)ebo breakdown voltage, emitter to base i eb = 10 a 5 v h fe forward-current transfer ratio v ce = 5 v; i c = 1 ma [25] (1) 1. see method 1019 of mil-std-750 for how to determine [h fe ] by first calculating the delta (1/h fe ) from the pre- and post-radiation h fe . notice the [h fe ] is not the same as h fe and cannot be measured directly. the [h fe ] value can never exceed the pre-radiation minimum h fe that it is based upon. v ce = 5 v; i c = 10 ma [30] (1) 240 v ce = 5 v; i c = 50 ma [30] (1) v ce(sat) collector-emitter saturation voltage i c = 10 ma; i b = 1 ma 0.2 v i c = 50 ma; i b = 5 ma 0.5 v be(sat) base-emitter saturation voltage i c = 10 ma; i b = 1 ma 1 v i c = 50 ma; i b = 5 ma 1
package mechanical data 2n5401hr 8/16 docid16934 rev 7 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 lcc-3 figure 5. lcc-3 drawings 2 1 3
docid16934 rev 7 9/16 2n5401hr package mechanical data 16 4.2 ub figure 6. ub drawings table 8. lcc-3 mechanical data dim. mm. min. typ. max. a 1.16 1.42 c 0.45 0.50 0.56 d 0.60 0.76 0.91 e 0.91 1.01 1.12 f 1.95 2.03 2.11 g 2.92 3.05 3.17 i 2.41 2.54 2.66 j 0.42 0.57 0.72 k 1.37 1.52 1.67 l 0.40 0.50 0.60 m 2.46 2.54 2.62 n 1.80 1.90 2.00 r 0.30
package mechanical data 2n5401hr 10/16 docid16934 rev 7 table 9. ub mechanical data dim. mm. min. typ. max. a 1.16 1.42 c 0.46 0.51 0.56 d 0.56 0.76 0.96 e 0.92 1.02 1.12 f 1.95 2.03 2.11 g 2.92 3.05 3.18 i 2.41 2.54 2.67 j 0.42 0.57 0.72 k 1.37 1.52 1.67 l 0.41 0.51 0.61 m 2.46 2.54 2.62 n 1.81 1.91 2.01 r 0.20 r1 0.30 r2 0.56
docid16934 rev 7 11/16 2n5401hr package mechanical data 16 4.3 to-18 figure 7. to-18 drawings table 10. to-18 mechanical data dim. mm. min. typ. max. a 12.7 b 0.49 d 5.3 e 4.9 f 5.8 g 2.54 h 1.2 i 1.16 l 45
order codes 2n5401hr 12/16 docid16934 rev 7 5 order codes table 11. order codes cpn agency specification eppl quality level radiation level (1) package lead finish marking (2) packing j2n5401ub1 - - engineering model jans - ub gold j5401ub1 wafflepack 2n5401ub1 - - engineering model escc - ub gold 2n5401ub1 wafflepack soc54011 - - engineering model escc - lcc-3 gold soc54011 wafflepack jansr2n5401ubg mil-prf- 19500/766 - jansr 100 krad high and low dose rate ub gold jsr5401 wafflepack jansr2n5401ubt mil-prf- 19500/766 - jansr 100 krad high and low dose rate ub solder dip jsr5401 wafflepack jans2n5401ubg mil-prf- 19500/766 - jans - ub gold js5401 wafflepack jans2n5401ubt mil-prf- 19500/766 - jans - ub solder dip js5401 wafflepack 2n5401rubg 5202/014/06r target escc flight 100 krad low dose rate ub gold 520201406r wafflepack 2n5401rubt 5202/014/07r target escc flight 100 krad low dose rate ub solder dip 520201407r wafflepack 2n5401ubg 5202/014/06 target escc flight - ub gold 520201406 wafflepack 2n5401ubt 5202/014/07 target escc flight - ub solder dip 520201407 wafflepack soc5401rhrg 5202/014/04r yes escc flight 100 krad low dose rate lcc-3 gold 520201404r wafflepack
2n5401hr order codes docid16934 rev 7 13/16 contact st sales office for information about the specific conditions for: ? products in die form ? other jans quality levels ? tape and reel packing soc5401rhrt 5202/014/05r yes escc flight 100 krad low dose rate lcc-3 solder dip 520201405r wafflepack soc5401hrg 5202/014/04 yes escc flight - lcc-3 gold 520201404 wafflepack soc5401hrt 5202/014/05 yes escc flight - lcc-3 solder dip 520201405 wafflepack 2N5401RHRG 5202/014/01r - escc flight 100 krad low dose rate to-18 gold 520201401r strip pack 2n5401rhrt 5202/014/02r - escc flight 100 krad low dose rate to-18 solder dip 520201402r strip pack 2n5401hrg 5202/014/01 - escc flight - to-18 gold 520201401 strip pack 2n5401hrt 5202/014/02 - escc flight - to-18 solder dip 520201402 strip pack 1. high dose rate as per mil-prf-19500 specif ication group d, subgroup 2 inspection. low dose rate as per escc specification 229 00. 2. specific marking only. the full marking includes in addition: for escc flight parts: st logo, date code, country of origin (f r), esa logo, serial number of the part within the assembly lot. for jans flight parts: st logo, date code, country of origin (f r), manufacturer code (cstm), serial number of the part within t he assembly lot. table 11. order codes (continued) cpn agency specification eppl quality level radiation level (1) package lead finish marking (2) packing
shipping details 2n5401hr 14/16 docid16934 rev 7 6 shipping details 6.1 date code date code xyywwz is structured as below table: 6.2 documentation table 12. date code xyywwz e m (escc & jans) 3 last two digits of the year week digits lot index in the week e s c c flight - j a n s f l i g h t (diffused in singapore) w table 13. documentation provided for each type of product quality level radiation level documentation engineering model - - jans flight - certificate of conformance jansr flight mil-std 100 krad certificate of conformance 50 rad/s radiation verification test report st 100 krad certificate of conformance 0.1 rad/s radiation verification test report on each wafer escc flight - certificate of conformance 100 krad certificate of conformance 0.1 rad/s radiation verification test report
docid16934 rev 7 15/16 2n5401hr revision history 16 7 revision history table 14. document revision history date revision changes 04-jan-2010 1 initial release 13-jul-2010 2 modified table 1: device summary , added table 11: order codes 10-oct-2012 3 table 1: device summary and section 5: order codes have been updated. section 4: package mechanical data has been updated. 12-nov-2012 4 added: section 2.1: electrical characteristics (curves) 22-oct-2013 5 updated table 1: device summary and table 11: order codes . minor text changes. 01-apr-2014 6 updated table 1: device summary , table 5: electrical characteristics and table 11: order codes . added section 3: radiation hardness assurance and section 6: shipping details . minor text changes. 14-jul-2014 7 updated table 1: device summary and table 11: order codes .
2n5401hr 16/16 docid16934 rev 7 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved

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